System specifications

Reading operations

All precisions quoted are 3σ confidence intervals

Current measurement

Accuracy: 1% at >16 nA, 10% at >1.6 nA
Minimum current measurement: ±200 pA
Maximum current measurement: ±10 mA
Current measurement resolution: 2.6 pA
Current measurement time: 1.5 ms

Voltage measurement

Accuracy: 1% at >20 mV, 10% at >2 mV
Minimum voltage measurement: ±200 μV
Maximum voltage measurement: ±10 V
Voltage measurement resolution: 77 μV
Voltage measurment time: 10 μs (single sample), 320 μs (averaged)

Programming operations

Maximum bias voltage: ±13.5 V
Bias voltage resolution: 305 μV at ±10 V, 610μ V at ±13.5 V
Bias voltage current limit: 10 mA (200mA across all channels)
Bias voltage slew rate: 400 mV/μs
Arbitrary Pulse generator voltage: ±13.5 V
Arbitrary Pulse generator width: 40 ns - inf
Arbitrary Pulse generator time resolution: 10 ns
Arbitrary Pulse generator current limit: 10 mA

Operation intervals

Minimum READ → WRITE interval: 20 μs
Minimum WRITE → READ interval: 150 μs

Programmable I/O

64 fully independent SMU channels with pulse generators and access to unified current source
32 digital outputs with arbitrary high/low levels at ±13.5 V
32 digital I/Os with arbitrary high level at 1.8-5.5 V
4 arbitrary supplies at ±13.5 V and ±100 mA

Crossbar management

SMU configuration for up to 32×32 selector enabled crossbar array
With 32NNA68 daughterboard (included as default):
- Switchable header pin array for access to all channels
- 68 pin PLCC socket for packaged samples (up to 1 kbit crossbar arrays)
Optional 32-port SMA array and 12-port BNC array daughterboards for probe interface
Optional 48-pin ZIF DIP socket daughterboard for use in general characterisation tasks with DIP packaged arrays.